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ALD로 증착한 HfO₂ stack의 성장거동과 전기적 특성에 대한 연구

DC Field Value Language
dc.contributor.advisor황철성-
dc.contributor.author조문주-
dc.date.accessioned2009-11-24T23:12:31Z-
dc.date.available2009-11-24T23:12:31Z-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058285kor
dc.identifier.urihttps://hdl.handle.net/10371/14665-
dc.description학위논문(석사)--서울대학교 대학원 :재료공학부,2003.kor
dc.format.extent149 p.kor
dc.language.isoko-
dc.publisher서울대학교 대학원kor
dc.subjectHfO2kor
dc.subjectGate oxidekor
dc.subjectALDkor
dc.subjectHRTEMkor
dc.subjectXRDkor
dc.titleALD로 증착한 HfO₂ stack의 성장거동과 전기적 특성에 대한 연구kor
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasterkor
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Master's Degree_재료공학부)
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