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CMOS 소자의 게이트 산화막을 위한 Lanthanum Silicate막의 원자층 증착과 전기적 특성
Atomic layer deposition and electric properties of Lanthanum Silicate films for gate oxide of CMOS devices

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Authors
최유진
Advisor
김형준
Issue Date
2009
Publisher
서울대학교 대학원
Keywords
high-κALDAl2O3La2O3XPS
Description
학위논문(석사) --서울대학교 대학원 :재료공학부,2009.8.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038687

https://hdl.handle.net/10371/15005
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Master's Degree_재료공학부)
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