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(The) microstructure and the properties of TaNx diffusion barrier deposited by inductively coupled plasma assisted sputtering

DC Field Value Language
dc.contributor.advisor이정중-
dc.contributor.author김성만-
dc.date.accessioned2009-11-25T02:46:50Z-
dc.date.available2009-11-25T02:46:50Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041104eng
dc.identifier.urihttps://hdl.handle.net/10371/15022-
dc.descriptionThesis(masters) --서울대학교 대학원 :재료공학부,2008.2.eng
dc.format.extentvi, 40 장eng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject탄탈룸 나이트라이드eng
dc.subjecttantalum nitride (TaNx)eng
dc.subject유도결합 플라즈마eng
dc.subjectinductively coupled plasma (ICP)eng
dc.subject확산방지막eng
dc.subjectdiffusion barriereng
dc.subject비정질eng
dc.subjectamorphouseng
dc.subject미세구조eng
dc.subjectmicrostructureeng
dc.title(The) microstructure and the properties of TaNx diffusion barrier deposited by inductively coupled plasma assisted sputteringeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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