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Epitaxial growth of SiGeC by UHV-CVD
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2006
- Publisher
- 서울대학교 대학원
- Keywords
- SiGe ; SiGe ; SiGeC ; SiGeC ; 초고진공화학기상증착법(UHV-CVD) ; ultra-high vacuum chemical vapor deposition (UHV-CVD) ; 인입 ; substitutional sites ; 포화 ; incorporation ; saturation
- Description
- Thesis(master`s)--서울대학교 대학원 :재료공학부,2006.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000047518
https://hdl.handle.net/10371/15127
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