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Study on Joule-heating effect of resistance switching and hybrid device for high-density memory applications : 저항 변화의 줄열 효과와 고집적 메모리 응용을 위한 하이브리드 소자 연구

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Authors

장서형

Advisor
노태원
Major
물리·천문학부(물리학전공)
Issue Date
2011-02
Publisher
서울대학교 대학원
Keywords
전이금속 산화물저항스위칭 현상RRAM스며들기 이론줄열 효과스니크 경로 문제transition metal oxideresistance switchingpercolationJoule-heating effectsneak path problem
Description
학위논문 (박사)-- 서울대학교 대학원 : 물리·천문학부(물리학전공), 2011.2. 노태원.
Language
eng
URI
https://hdl.handle.net/10371/158588

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