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Growth behavior and phase change characteristics of Ge doped Sb-Te thin films for phase change memory application
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- Authors
- Advisor
- 황철성
- Major
- 재료공학부
- Issue Date
- 2011-02
- Publisher
- 서울대학교 대학원
- Keywords
- Ge doped Sb-Te ; 플라즈마 강화 화학기상 증착법 (PECVD) ; 상변화 메모리 (PRAM) ; 상분리 ; Plasma enhanced chemical vapor deposition (PECVD) ; PRAM ; Phase separation
- Description
- 학위논문 (박사)-- 서울대학교 대학원 : 재료공학부, 2011.2. 황철성.
- Language
- eng
- URI
- https://hdl.handle.net/10371/158978
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000028944
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