Browse

탄화규소의 MOS 계면 특성 향상을 위한 질화처리 효과
The Effect of Nitridation for Improving Interface Properties of 4H-SiC MOS Device

Cited 0 time in Web of Science Cited 0 time in Scopus
Authors
김창현
Advisor
김형준
Major
재료공학부
Issue Date
2011-02
Publisher
서울대학교 대학원
Keywords
MOS계면결함밀도질화처리증착산화막interface state densitynitridationdeposited oxide
Description
학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2011.2. 김형준.
Language
kor
URI
https://hdl.handle.net/10371/159478

http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029768
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Master's Degree_재료공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse