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탄화규소의 MOS 계면 특성 향상을 위한 질화처리 효과 : The Effect of Nitridation for Improving Interface Properties of 4H-SiC MOS Device
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 김창현 | - |
| dc.date.accessioned | 2019-07-10T05:06:51Z | - |
| dc.date.available | 2019-07-10T05:06:51Z | - |
| dc.date.issued | 2011-02 | - |
| dc.identifier.other | 000000029768 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/159478 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029768 | ko_KR |
| dc.description | 학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2011.2. 김형준. | - |
| dc.format.extent | x, 83장 | - |
| dc.language.iso | kor | - |
| dc.publisher | 서울대학교 대학원 | - |
| dc.subject | MOS | - |
| dc.subject | 계면결함밀도 | - |
| dc.subject | 질화처리 | - |
| dc.subject | 증착산화막 | - |
| dc.subject | interface state density | - |
| dc.subject | nitridation | - |
| dc.subject | deposited oxide | - |
| dc.title | 탄화규소의 MOS 계면 특성 향상을 위한 질화처리 효과 | - |
| dc.title.alternative | The Effect of Nitridation for Improving Interface Properties of 4H-SiC MOS Device | - |
| dc.type | Thesis | - |
| dc.type | Dissertation | - |
| dc.description.degree | Master | - |
| dc.contributor.affiliation | 재료공학부 | - |
| dc.date.awarded | 2011-02 | - |
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