Publications
Detailed Information
Characterization of an oxide traps leading to random telegraph noise in the gate induced drain leakage current of DRAM cell transistors : DRAM Cell 트랜지스터의 GIDL 전류 RTN을 일으키는 트랩의 특성 분석
Cited 0 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Advisor
- 신형철
- Major
- 전기. 컴퓨터공학부
- Issue Date
- 2011-02
- Publisher
- 서울대학교 대학원
- Keywords
- Random telegraph noise (RTN) ; Gate induced drain leakage (GIDL) ; 트랩 위치 ; 트랩 에너지 준위 ; Retention time. ; Trap location ; Trap energy level ; Retention time
- Description
- 학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.2. 신형철.
- Language
- eng
- URI
- https://hdl.handle.net/10371/159682
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029919
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.