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Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics

DC Field Value Language
dc.contributor.authorSon, Donghee-
dc.contributor.authorKoo, Ja Hoon-
dc.contributor.authorSong, Jun-Kyul-
dc.contributor.authorKim, Jaemin-
dc.contributor.authorLee, Mincheol-
dc.contributor.authorShim, Hyung Joon-
dc.contributor.authorPark, Minjoon-
dc.contributor.authorLee, Minbaek-
dc.contributor.authorKim, Ji Hoon-
dc.contributor.authorKim, Dae-Hyeong-
dc.date.accessioned2020-02-17T04:29:23Z-
dc.date.available2020-02-17T04:29:23Z-
dc.date.created2018-06-27-
dc.date.issued2015-05-
dc.identifier.citationACS Nano, Vol.9 No.5, pp.5585-5593-
dc.identifier.issn1936-0851-
dc.identifier.other38039-
dc.identifier.urihttps://hdl.handle.net/10371/164329-
dc.description.abstractElectronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleStretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.5b01848-
dc.citation.journaltitleACS Nano-
dc.identifier.wosid000355383000096-
dc.identifier.scopusid2-s2.0-84930642396-
dc.citation.endpage5593-
dc.citation.number5-
dc.citation.startpage5585-
dc.citation.volume9-
dc.identifier.sci000355383000096-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKim, Dae-Hyeong-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusACTIVE-MATRIX BACKPLANES-
dc.subject.keywordPlusHUMAN-MACHINE INTERFACES-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusINTEGRATED-CIRCUITS-
dc.subject.keywordPlusEPIDERMAL ELECTRONICS-
dc.subject.keywordPlusCONFORMAL DEVICES-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusSKIN-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordAuthorcarbon nanotubes-
dc.subject.keywordAuthorcharge-trap floating-gate memory-
dc.subject.keywordAuthorlogic gates-
dc.subject.keywordAuthorstretchable electronics-
dc.subject.keywordAuthorwearable electronics-
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  • College of Engineering
  • School of Chemical and Biological Engineering
Research Area Materials Science

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