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Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

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dc.contributor.authorKim, Dae-Hyeong-
dc.contributor.authorSong, Jizhou-
dc.contributor.authorWon, Mook Choi-
dc.contributor.authorKim, Hoon-Sik-
dc.contributor.authorKim, Rak-Hwan-
dc.contributor.authorLiu, Zhuangjian-
dc.contributor.authorHuang, Yonggang Y.-
dc.contributor.authorHwang, Keh-Chih-
dc.contributor.authorZhang, Yong-Wei-
dc.contributor.authorRogers, John A.-
dc.date.accessioned2020-02-17T04:31:56Z-
dc.date.available2020-02-17T04:31:56Z-
dc.date.issued2008-12-
dc.identifier.citationProceedings of the National Academy of Sciences of the United States of America, Vol.105 No.48, pp.18675-18680-
dc.identifier.isbn0027-8424-
dc.identifier.issn0027-8424-
dc.identifier.other38441-
dc.identifier.urihttps://hdl.handle.net/10371/164343-
dc.description.abstractElectronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enablenewbiomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics. © 2008 by The National Academy of Sciences of the USA.-
dc.subjectBuckling mechanics-
dc.subjectFlexible electronics-
dc.subjectPlastic electronics-
dc.subjectSemiconductor nanomaterials-
dc.subjectStretchable electronics-
dc.titleMaterials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations-
dc.typeArticle-
dc.identifier.doi10.1073/pnas.0807476105-
dc.citation.journaltitleProceedings of the National Academy of Sciences of the United States of America-
dc.identifier.scopusid2-s2.0-57749117387-
dc.citation.endpage18680-
dc.citation.number48-
dc.citation.startpage18675-
dc.citation.volume105-
dc.identifier.rimsid38441-
dc.identifier.sci000261489100014-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKim, Dae-Hyeong-
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Chemical Convergence for Energy and Environment (에너지환경 화학융합기술전공)Journal Papers (저널논문_에너지환경 화학융합기술전공)
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