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Semiconductor wires and ribbons for high-performance flexible electronics

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dc.contributor.authorBaca, Alfred J.-
dc.contributor.authorAhn, Jong-Hyun-
dc.contributor.authorSun, Yugang-
dc.contributor.authorMeitl, Matthew A.-
dc.contributor.authorMenard, Etienne-
dc.contributor.authorKim, Hoon-Sik-
dc.contributor.authorChoi, Won Mook-
dc.contributor.authorKim, Dae-Hyeong-
dc.contributor.authorHuang, Young-
dc.contributor.authorRogers, John A.-
dc.date.accessioned2020-02-17T04:36:25Z-
dc.date.available2020-02-17T04:36:25Z-
dc.date.created2018-06-29-
dc.date.issued2008-07-
dc.identifier.citationAngewandte Chemie - International Edition, Vol.47 No.30, pp.5524-5542-
dc.identifier.issn1433-7851-
dc.identifier.other38382-
dc.identifier.urihttps://hdl.handle.net/10371/164368-
dc.description.abstractThis article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized. Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts. Finally, future directions and promising areas of research will be described. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.language영어-
dc.publisherJohn Wiley & Sons Ltd.-
dc.titleSemiconductor wires and ribbons for high-performance flexible electronics-
dc.typeArticle-
dc.identifier.doi10.1002/anie.200703238-
dc.citation.journaltitleAngewandte Chemie - International Edition-
dc.identifier.wosid000257809700005-
dc.identifier.scopusid2-s2.0-53549110257-
dc.citation.endpage5542-
dc.citation.number30-
dc.citation.startpage5524-
dc.citation.volume47-
dc.identifier.sci000257809700005-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKim, Dae-Hyeong-
dc.type.docTypeReview-
dc.description.journalClass1-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusSINGLE-CRYSTAL SILICON-
dc.subject.keywordPlusONE-DIMENSIONAL NANOSTRUCTURES-
dc.subject.keywordPlusPANEL DISPLAY TECHNOLOGY-
dc.subject.keywordPlusIII-V SEMICONDUCTORS-
dc.subject.keywordPlusLIQUID-SOLID GROWTH-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusSOFT LITHOGRAPHY-
dc.subject.keywordPlusNANOWIRE ARRAYS-
dc.subject.keywordAuthorlithography-
dc.subject.keywordAuthormacroelectronics-
dc.subject.keywordAuthormicrofabrication-
dc.subject.keywordAuthornanostructures-
dc.subject.keywordAuthorwavy silicon-
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  • School of Chemical and Biological Engineering
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