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Selective epitaxial growth of Si and SiGe by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) : 초고진공 화학기상증착법을 이용한 Si와 SiGe 단결정막의 선택적 성장
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 윤의준 | - |
dc.contributor.author | 임승현 | - |
dc.date.accessioned | 2009-11-27T06:53:12Z | - |
dc.date.available | 2009-11-27T06:53:12Z | - |
dc.date.copyright | 2003. | - |
dc.date.issued | 2003 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000059508 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/16804 | - |
dc.description | Thesis (doctoral)--서울대학교 대학원 :재료공학부,2003. | eng |
dc.format.extent | xv, 170 leaves | eng |
dc.language.iso | en | eng |
dc.publisher | 서울대학교 대학원 | eng |
dc.subject | 초고진공 화학기상증착법 (UHV-CVD) | eng |
dc.subject | Ultrahigh vacuum chemical vapor deposition (uhv-cvd) | eng |
dc.subject | 선택적 단결정막 성장 (SEG) | eng |
dc.subject | Selective epitaxial growth (seg) | eng |
dc.subject | Si | eng |
dc.subject | Si | eng |
dc.subject | SiGe | eng |
dc.subject | Sige | eng |
dc.subject | 사면 | eng |
dc.subject | Facet | eng |
dc.subject | 등방성/비등방성 성장 | eng |
dc.subject | Isotropic/anisotropic growth | eng |
dc.subject | 물질 이동 | eng |
dc.subject | Mass transport | eng |
dc.subject | 표면 확산 | eng |
dc.subject | Surface diffusion | eng |
dc.subject | 자유 에너지 변화 | eng |
dc.subject | Free energy change | eng |
dc.title | Selective epitaxial growth of Si and SiGe by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD) | eng |
dc.title.alternative | 초고진공 화학기상증착법을 이용한 Si와 SiGe 단결정막의 선택적 성장 | eng |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Doctor | eng |
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