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Selective epitaxial growth of Si and SiGe by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD)
초고진공 화학기상증착법을 이용한 Si와 SiGe 단결정막의 선택적 성장

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author임승현-
dc.date.accessioned2009-11-27T06:53:12Z-
dc.date.available2009-11-27T06:53:12Z-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000059508eng
dc.identifier.urihttps://hdl.handle.net/10371/16804-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :재료공학부,2003.eng
dc.format.extentxv, 170 leaveseng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subject초고진공 화학기상증착법 (UHV-CVD)eng
dc.subjectUltrahigh vacuum chemical vapor deposition (uhv-cvd)eng
dc.subject선택적 단결정막 성장 (SEG)eng
dc.subjectSelective epitaxial growth (seg)eng
dc.subjectSieng
dc.subjectSieng
dc.subjectSiGeeng
dc.subjectSigeeng
dc.subject사면eng
dc.subjectFaceteng
dc.subject등방성/비등방성 성장eng
dc.subjectIsotropic/anisotropic growtheng
dc.subject물질 이동eng
dc.subjectMass transporteng
dc.subject표면 확산eng
dc.subjectSurface diffusioneng
dc.subject자유 에너지 변화eng
dc.subjectFree energy changeeng
dc.titleSelective epitaxial growth of Si and SiGe by cold wall ultrahigh vacuum chemical vapor deposition (UHV-CVD)eng
dc.title.alternative초고진공 화학기상증착법을 이용한 Si와 SiGe 단결정막의 선택적 성장eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
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