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Far-infrared study of substrate-effect on large scale graphene

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dc.contributor.authorKim, Joo Youn-
dc.contributor.authorLee, Chul-
dc.contributor.authorBae, Sukang-
dc.contributor.authorKim, Keun Soo-
dc.contributor.authorHong, Byung Hee-
dc.contributor.authorChoi, E. J.-
dc.date.accessioned2021-01-31T08:29:08Z-
dc.date.available2021-01-31T08:29:08Z-
dc.date.issued2011-05-
dc.identifier.citationApplied Physics Letters, Vol.98 No.20, p. 201907-
dc.identifier.issn0003-6951-
dc.identifier.other119008-
dc.identifier.urihttps://hdl.handle.net/10371/172162-
dc.description.abstractFrom far-IR Drude absorption measurement we determine carrier density (N) and carrier scattering rate (Gamma) of graphene deposited on buffer-layer/SiO2 composite substrate. Two types of buffer-layers, (1) polar dielectric oxide ZnO and SrTiO3 (2) organic thin film hexamethyldisilazane and polymethyl methacrylate (PMMA) were studied. N varies widely over 0.12-11.8 (X10(12) cm(-2)) range depending on the buffer-layer. In contrast Gamma remains almost constant, similar to 100 cm(-1), irrespective of the buffer-layers. This indicates that carrier mobility (mu) of graphene depends on substrate through N, but not by Gamma as commonly believed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3590773]-
dc.titleFar-infrared study of substrate-effect on large scale graphene-
dc.typeArticle-
dc.contributor.AlternativeAuthor홍병희-
dc.identifier.doi10.1063/1.3590773-
dc.citation.journaltitleApplied Physics Letters-
dc.identifier.scopusid2-s2.0-79957575166-
dc.citation.number20-
dc.citation.startpage201907-
dc.citation.volume98-
dc.identifier.rimsid119008-
dc.identifier.sci000290812100024-
dc.contributor.affiliatedAuthorHong, Byung Hee-
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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