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High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

Cited 325 time in Web of Science Cited 337 time in Scopus
Authors
Kim, Beom Joon; Jang, Houk; Lee, Seoung-Ki; Hong, Byung Hee; Ahn, Jong-Hyun; Cho, Jeong Ho
Issue Date
2010-09
Citation
Nano Letters, Vol.10 No.9, pp.3464-3466
Keywords
Grapheneion gelflexible electronicsfield effect transistorlow-voltage operation
Abstract
A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 +/- 57 and 91 +/- 50 cm(2)/(V.s), respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.
ISSN
1530-6984
URI
https://hdl.handle.net/10371/172217
DOI
https://doi.org/10.1021/nl101559n
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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