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Wafer-Scale Synthesis and Transfer of Graphene Films

Cited 858 time in Web of Science Cited 893 time in Scopus
Authors
Lee, Youngbin; Bae, Sukang; Jang, Houk; Jang, Sukjae; Zhu, Shou-En; Sim, Sung Hyun; Song, Young Il; Hong, Byung Hee; Ahn, Jong-Hyun
Issue Date
2010-02
Citation
Nano Letters, Vol.10 No.2, pp.490-493
Keywords
Graphenetransferfield effect transistorstrain gaugestretchable electronics
Abstract
We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on NI and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. we also demonstrated the applications of the large-area graphene films for the batch fabrication of held-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was similar to 6.1. These methods represent a significant. step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
ISSN
1530-6984
URI
https://hdl.handle.net/10371/172218
DOI
https://doi.org/10.1021/nl903272n
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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