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All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seoung-Ki | - |
dc.contributor.author | Jang, Ho Young | - |
dc.contributor.author | Jang, Sukjae | - |
dc.contributor.author | Choi, Euiyoung | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Lee, Jaichan | - |
dc.contributor.author | Park, Sungho | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.date.accessioned | 2021-01-31T08:32:35Z | - |
dc.date.available | 2021-01-31T08:32:35Z | - |
dc.date.created | 2020-12-10 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.citation | Nano Letters, Vol.12 No.7, pp.3472-3476 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | 118961 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172219 | - |
dc.description.abstract | High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GC) dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 x 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm(2)/(V.s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1021/nl300948c | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 000306296200020 | - |
dc.identifier.scopusid | 2-s2.0-84863856055 | - |
dc.citation.endpage | 3476 | - |
dc.citation.number | 7 | - |
dc.citation.startpage | 3472 | - |
dc.citation.volume | 12 | - |
dc.identifier.sci | 000306296200020 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SCALE EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | GRAPHITE OXIDE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | graphene oxide | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | thin film transistor | - |
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