Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor

Cited 126 time in Web of Science Cited 131 time in Scopus

Son, Jangyup; Lee, Soogil; Kim, Sang Jin; Park, Byung Cheol; Lee, Han-Koo; Kim, Sanghoon; Kim, Jae Hoon; Hong, Byung Hee; Hong, Jongill

Issue Date
Nature Publishing Group
Nature Communications, Vol.7, p. 13261
Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.