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Controlled growth of a graphene charge-floating gate for organic non-volatile memory transistors

Cited 9 time in Web of Science Cited 9 time in Scopus
Authors
Park, Yunhwan; Park, Subeom; Jo, Insu; Hong, Byung Hee; Hong, Yongtaek
Issue Date
2015-12
Citation
Organic Electronics: physics, materials, applications, Vol.27, pp.227-231
Keywords
GraphenePentaceneNon-volatile memoryOrganic thin film transistor
Abstract
We report memory application for graphene as a floating gate in organic thin-film transistor (OTFT) structure. For graphene floating gate, we demonstrate a simpler synthesis method to form a discrete graphene layer by controlling the growth time during a conventional CVD process. The resulting organic memory transistor with the discrete graphene charge-storage layer is evaluated. The device was demonstrated based on solution-processed tunneling dielectric layers and evaporated pentacene organic semiconductor. The resulting devices exhibited programmable memory characteristics, including threshold voltage shifts (similar to 28 V) in the programmed/erased states when an appropriate gate voltage was applied. They also showed an estimated long data retention ability and program/erase cycles endurance more than 100 times with reliable non-volatile memory properties although operated without encapsulation and in an ambient condition. (C) 2015 Elsevier B.V. All rights reserved.
ISSN
1566-1199
URI
https://hdl.handle.net/10371/172261
DOI
https://doi.org/10.1016/j.orgel.2015.09.017
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College of Natural Sciences (자연과학대학)Dept. of Chemistry (화학부)Journal Papers (저널논문_화학부)
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