Phenomenology-based model predictive control of electron density in Ar/SF6 capacitively coupled etch plasma

Abstract

A phenomenology-based model predictive controller (MPC) to control the electron density as desired set-point in Ar/SF6 capacitively coupled etch plasma was developed. The control model was established based on the power balance model and the dynamic characteristics of the equipment. The performance of the controller is evaluated through set-point tracking test, and it reveals that the MPC showed better performance compared to proportional integral derivative (PID) controller. It is expected that this MPC algorithm will be an element technology of an automated process controller to sustain the process plasma in the desired condition.