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Spatially Controlled Fabrication of Surface-Enhanced Raman Scattering Hot Spots through Photoinduced Dewetting of SilverThin Films

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dc.contributor.authorChoi, Han-Kyu-
dc.contributor.authorPark, Sang-Min-
dc.contributor.authorJeong, Jeeyoon-
dc.contributor.authorLee, Hankyul-
dc.contributor.authorYeon, Gyu Jin-
dc.contributor.authorKim, Dai-Sik-
dc.contributor.authorKim, Zee Hwan-
dc.date.accessioned2022-06-23T04:39:54Z-
dc.date.available2022-06-23T04:39:54Z-
dc.date.created2022-05-16-
dc.date.issued2022-04-
dc.identifier.citationJournal of Physical Chemistry Letters, Vol.13 No.13, pp.2969-2975-
dc.identifier.issn1948-7185-
dc.identifier.urihttps://hdl.handle.net/10371/183705-
dc.description.abstractA well-designed narrow gap between noble metal nanostructures plays aprominent role in surface-enhanced Raman scattering (SERS) to concentrate electromagneticfields at the local point, called a"hot spot". However, SERS-active substrate fabricationremains a substantial hurdle due to the high process cost and the difficulty of engineeringefficient plasmonic hot spots at the target area. In this study, we demonstrate a simplephotolithographic method for generating ultrasensitive SERS hot spots at desired positions.The solid-state dewetting of a Ag thinfilm (thickness of similar to 10 nm) using a continuous-wavelaser (similar to 1 MW/cm2) generates a closely packed assembly of hemispherical Ag nanoislands.Some of these nanoislands provide substantial plasmonic-field enhancement that is sufficientfor single-molecule detection and plasmon-catalyzed chemical reaction. Such hot spotstructures can be patterned on the substrate with a spatial resolution of better than 1 mu m. Inintegrated analytical devices, the patterned SERS hot spots can be used as position-specificchemical-sensing elements.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleSpatially Controlled Fabrication of Surface-Enhanced Raman Scattering Hot Spots through Photoinduced Dewetting of SilverThin Films-
dc.typeArticle-
dc.identifier.doi10.1021/acs.jpclett.2c00403-
dc.citation.journaltitleJournal of Physical Chemistry Letters-
dc.identifier.wosid000787083700015-
dc.identifier.scopusid2-s2.0-85127887203-
dc.citation.endpage2975-
dc.citation.number13-
dc.citation.startpage2969-
dc.citation.volume13-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKim, Dai-Sik-
dc.contributor.affiliatedAuthorKim, Zee Hwan-
dc.type.docTypeArticle-
dc.description.journalClass1-
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