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Next generation ferroelectric materials for semiconductor process integration and their applications

Cited 168 time in Web of Science Cited 180 time in Scopus
Authors

Mikolajick, T.; Slesazeck, S.; Mulaosmanovic, H.; Park, M.H.; Fichtner, S.; Lomenzo, P.D.; Hoffmann, M.; Schroeder, U.

Issue Date
2021-03
Publisher
American Institute of Physics
Citation
Journal of Applied Physics, Vol.129 No.10
Abstract
Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications. © 2021 Author(s).
ISSN
0021-8979
URI
https://hdl.handle.net/10371/183863
DOI
https://doi.org/10.1063/5.0037617
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