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Next generation ferroelectric materials for semiconductor process integration and their applications
Cited 168 time in
Web of Science
Cited 180 time in Scopus
- Authors
- Issue Date
- 2021-03
- Publisher
- American Institute of Physics
- Citation
- Journal of Applied Physics, Vol.129 No.10
- Abstract
- Ferroelectrics are a class of materials that possess a variety of interactions between electrical, mechanical, and thermal properties that have enabled a wealth of functionalities. To realize integrated systems, the integration of these functionalities into semiconductor processes is necessary. To this end, the complexity of well-known ferroelectric materials, e.g., the perovskite class, causes severe issues that limit its applications in integrated systems. The discovery of ferroelectricity in hafnium oxide-based materials brought a renewed interest into this field during the last decade. Very recently, ferroelectricity was also verified in aluminum scandium nitride extending the potential of seeing a wealth of ferroelectric functions in integrated electronics in the future. This paper discusses the prospects of both material systems in various applications. © 2021 Author(s).
- ISSN
- 0021-8979
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