Extraction of Mobility in 3-D NAND Flash Memory with Poly-Si based Macaroni Structure

Abstract

In this paper, mobility model for poly-Si based macaroni structure in 3-D NAND Flash memory is presented. String current was calibrated with technology computer-aided design (TCAD) simulation at room temperature (25 degrees C) with U-shaped trap distribution. Then, unit word line (WL) I-V curve was extracted, and effective mobility was extracted from these data using analytical equation. Mobility model is based on Meyer-Neldel Rule (MNR). We extracted grain boundary barrier height (phi(b)) and fitted with our model. Finally, we fitted effective mobility (mu(eff)) with our model and fitted string current with SPICE simulation.