Selection Line Optimization of Nanoelectromechanical (NEM) Memory Switches for Stress Relief

Abstract

Selection lines (SLs) of nanoelectromechanical (NEM) memory switches are optimized for stress relief by using finite-element-method (FEM) simulation. According to the simulation results, as the length of SL (L-SL) decreases, pull-in voltage (Vp(I)) increases while the maximum stress (sigma(max) ) concentrated at the anchor of a movable beam decreases. Thus, it is important to determine optimal L-SL, to achieve better reliability while maintaining Vp(I).