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Selection Line Optimization of Nanoelectromechanical (NEM) Memory Switches for Stress Relief
Cited 2 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2019-04
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.19 No.2, pp.203-207
- Abstract
- Selection lines (SLs) of nanoelectromechanical (NEM) memory switches are optimized for stress relief by using finite-element-method (FEM) simulation. According to the simulation results, as the length of SL (L-SL) decreases, pull-in voltage (Vp(I)) increases while the maximum stress (sigma(max) ) concentrated at the anchor of a movable beam decreases. Thus, it is important to determine optimal L-SL, to achieve better reliability while maintaining Vp(I).
- ISSN
- 1598-1657
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