Switching Voltage Analysis of Nanoelectromechanical Memory Switches for Monolithic 3-D CMOS-NEM Hybrid Reconfigurable Logic Circuits

Abstract

The accurate calculation of switching voltage (V-s) is necessary for the reliable and low-power operation of monolithic 3-D (M3D) CMOS-nanoelectromechanical (NEM) hybrid reconfigurable logic circuits because V-s corresponds to the operating voltage (V-dd) of NEM memory switches. In this paper, based on the Euler-Bernoulli equation, the physics-based analytical model is proposed to determine V-s. The accuracy of the proposed model is verified by both the finite-element analysis and experimental results. Our proposed model shows >3% error compared with experimental data. Also, the design guidelines of NEM memory switches are presented in terms of minimum V-s (V-s_(m)) and device dimensions.