Influence of Number Fluctuation and Position Variation of Channel Dopants and Gate Metal Grains on Tunneling Field-Effect Transistors (TFETs)

Abstract

The influence of number fluctuation and position variation on channel dopants and gate metal grains on tunneling field-effect transistors (TFETs) have been discussed in comparison with metal-oxide-semiconductor FETs (MOSFETs). Based on the simulation results of randomly generated device samples, the shape of the statistical threshold voltage (V-th) distribution of TFETs associated with individual variation sources such as random dopant fluctuation (RDF) and work-function variation (WFV) have been found to be significantly different than that of MOSFETs. This analysis provides a detailed insight into the variation sources related to underlying physics of TFETs.