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Dynamic Slingshot Operation for Low-Operation-Voltage Nanoelectromechanical (NEM) Memory Switches

Cited 1 time in Web of Science Cited 1 time in Scopus
Authors

Kang, Min Hee; Choi, Woo Young

Issue Date
2020-04
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
IEEE Access, Vol.8, pp.65683-65688
Abstract
A dynamic slingshot pull-in operation is presented by using the influence of inertia and damping on the nanoelectromechanical (NEM) memory switch operation. To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, is performed, and an analytical one-dimensional (1D), the parallel plate model is tested. According to the analytical and FEA data, the dynamic slingshot pull-in voltage can be achieved similar to 0.78 times and similar to 0.73 times lower than conventional pull-in voltage under near-vacuum conditions, respectively. It is also shown that the proposed dynamic slingshot operation is more effective for lowering operation voltage (V-DD) and boosting the chip density of complementary-metal-oxide-semiconductor (CMOS)- NEM hybrid reconfigurable logic (RL) circuits than the static slingshot operation.
ISSN
2169-3536
URI
https://hdl.handle.net/10371/186914
DOI
https://doi.org/10.1109/ACCESS.2020.2985105
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