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N-doped graphene field-effect transistors with enhanced electron mobility and air-stability
Cited 66 time in
Web of Science
Cited 68 time in Scopus
- Authors
- Issue Date
- 2014-05
- Publisher
- Wiley - V C H Verlag GmbbH & Co.
- Citation
- Small, Vol.10 No.10, pp.1999-2005
- Abstract
- Although graphene can be easily p-doped by various adsorbates, developing stable n-doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution-processed (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) on chemical-vapor-deposited (CVD) graphene. Strong n-type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field-effect transistors. The strong n-type doping effect shifts the Dirac point to around -140 V. Appropriate annealing at a low temperature of 80 oC enables an enhanced electron mobility of 1150 cm(2) V-1 s(-1). The work function and its uniformity on a large scale (1.2 mm x 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month.
- ISSN
- 1613-6810
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