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Reversible Transition of Semiconducting PtSe<sub>2</sub> and Metallic PtTe<sub>2</sub> for Scalable All-2D Edge-Contacted FETs

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Han, Sang Sub; Sattar, Shahid; Kireev, Dmitry; Shin, June-Chul; Bae, Tae-Sung; Ryu, Hyeon Ih; Cao, Justin; Shum, Alex Ka; Kim, Jung Han; Canali, Carlo Maria; Akinwande, Deji; Lee, Gwan-Hyoung; Chung, Hee-Suk; Jung, Yeonwoong

Issue Date
American Chemical Society
Nano Letters, Vol.24 No.6, pp.1891-1900
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of similar to 50.30 cm(2) V-1 s(-1) at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자


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