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Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment

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Choi, Myungwoo; Baek, Jinwook; Ryu, Huije; Lee, Hyejeong; Byen, Jicheol; Hong, Seong-Gu; Kim, Bum Jun; Cho, Sooheon; Song, Jae Yong; Lee, Gwan-Hyoung; Shin, Hosun; Choi, Jae-Young; Jeon, Seokwoo

Issue Date
American Chemical Society
Nano Letters, Vol.22 No.13, pp.5198-5206
© 2022 American Chemical Society. All rights reserved.Over the past few years, many efforts have been devoted to growing single-crystal graphene due to its great potential in future applications. However, a number of issues remain for single-crystal graphene growth, such as control of nanoscale defects and the substrate-dependent nonuniformity of graphene quality. In this work, we demonstrate a possible route toward single-crystal graphene by combining aligned nucleation of graphene nanograins on Cu/Ni (111) and sequential heat treatment over pregrown graphene grains. By use of a mobile hot-wire CVD system, prealigned grains were stitched into one continuous film with up to ∼97% single-crystal domains, compared to graphene grown on polycrystalline Cu, which was predominantly high-angle tilt boundary (HATB) domains. The single-crystal-like graphene showed remarkably high thermal conductivity and carrier mobility of ∼1349 W/mK at 350 K and ∼33 »600 (38 »400) cm2V-1s-1for electrons (holes), respectively, which indicates that the crystallinity is high due to suppression of HATB domains.
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자


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