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Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

Cited 30 time in Web of Science Cited 32 time in Scopus
Authors

Yang, Seunghoon; Cha, Janghwan; Kim, Jong Chan; Lee, Donghun; Huh, Woong; Kim, Yoonseok; Lee, Seong Won; Park, Hong-Gyu; Jeong, Hu Young; Hong, Suklyun; Lee, Gwan-HyoungLee, Chul-Ho

Issue Date
2020-04
Publisher
American Chemical Society
Citation
Nano Letters, Vol.20 No.4, pp.2443-2451
Abstract
In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe2-MoS2 p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WOx layer, which is directly formed by layer-by-layer oxidation of WSe2, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe2-MoS(2 )p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.
ISSN
1530-6984
URI
https://hdl.handle.net/10371/202088
DOI
https://doi.org/10.1021/acs.nanolett.9b05162
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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