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Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Cited 258 time in Web of Science Cited 270 time in Scopus
Authors

Huh, Woong; Lee, Donghun; Lee, Chul-Ho

Issue Date
2020-12
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Citation
Advanced Materials, Vol.32 No.51, p. 2002092
Abstract
The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.
ISSN
0935-9648
URI
https://hdl.handle.net/10371/202246
DOI
https://doi.org/10.1002/adma.202002092
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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