Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

Abstract

We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.