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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors
Cited 70 time in
Web of Science
Cited 76 time in Scopus
- Authors
- Issue Date
- 2008-02
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, Vol.92 No.5, p. 052102
- Abstract
- We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4 nm radius and the gate length ranging from 22 to 408 nm. We observed strong transconductance overshoot in the linear source-drain bias regime in the devices with channel length shorter than 46 nm. The mean free path estimated from the slope of the zero-field one dimensional ballistic resistance measured as a function of device length was almost the same as this length. (c) 2008 American Institute of Physics.
- ISSN
- 0003-6951
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