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Design and analysis of MOS gated-thyristor for improving forward characteristics and maximum controllable current
순방향 특성 및 최대 제어가능 전류 特性 改善을 위한 MOS 구동 사이리스터의 設計 및 分析

DC Field Value Language
dc.contributor.advisor한민구-
dc.contributor.author변대석-
dc.date.accessioned2010-01-15T04:24:05Z-
dc.date.available2010-01-15T04:24:05Z-
dc.date.copyright1999.-
dc.date.issued1999-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000071861eng
dc.identifier.urihttps://hdl.handle.net/10371/30943-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :전기공학부,1999.en
dc.format.extentx, 165 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject사이리스터en
dc.subjectthyristoren
dc.subject순방향 특성en
dc.subjectforward characteristicsen
dc.subject스냅-백en
dc.subjectsnap-backen
dc.subject순방향 전압강하en
dc.subjectforward voltage dropen
dc.subject래치-업en
dc.subjectlatch-upen
dc.titleDesign and analysis of MOS gated-thyristor for improving forward characteristics and maximum controllable currenten
dc.title.alternative순방향 특성 및 최대 제어가능 전류 特性 改善을 위한 MOS 구동 사이리스터의 設計 및 分析-
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeDoctoren
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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