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비휘발성 기억소자용 PZT 박막의 형성에 관한 연구 : A Study on the PZT thin film fabrication process for non-volatile memory devices

DC Field Value Language
dc.contributor.advisor주승기-
dc.contributor.author박응철-
dc.date.accessioned2010-01-16T13:53:48Z-
dc.date.available2010-01-16T13:53:48Z-
dc.date.copyright2000.-
dc.date.issued2000-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000069512kor
dc.identifier.urihttps://hdl.handle.net/10371/34569-
dc.description학위논문(박사)--서울대학교 대학원 :금속공학과,2000.ko
dc.format.extentxii, 126 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectPZTko
dc.subjectferroelectricko
dc.subject강유전체ko
dc.subjectfatigueko
dc.subject피로현상ko
dc.subjectgrain boundaryko
dc.subject결정립계ko
dc.subjectPtko
dc.title비휘발성 기억소자용 PZT 박막의 형성에 관한 연구ko
dc.title.alternativeA Study on the PZT thin film fabrication process for non-volatile memory devicesko
dc.typeThesis-
dc.contributor.department금속공학과-
dc.description.degreeDoctorko
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