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Hydride Vapor Phase Epitaxy를 이용한 GaN 후막증착과 극성이 결정성장에 미치는 영향
Hydride Vapor Phase Epitaxy of GaN thick films and polarity effects on crystal growth

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Authors
이수민
Advisor
정수진
Issue Date
2002
Publisher
서울대학교 대학원
Keywords
GaNDefect StructureHVPECrystal Polarity결함구조결정 극성
Description
학위논문(박사)--서울대학교 대학원 :재료공학부,2002.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063193

https://hdl.handle.net/10371/35404
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
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