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Metallorganic chemical vapor deposition(MOCVD) of tantalum oxynitride(TaOxNy) as a high k dielectric material for next generation devices : 고유전물질로서 화학기상증착법으로 증착된 탄탈륨 질산화막에 대한 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김기범 | - |
| dc.contributor.author | 조성래 | - |
| dc.date.accessioned | 2010-01-17T02:17:25Z | - |
| dc.date.available | 2010-01-17T02:17:25Z | - |
| dc.date.copyright | 2002. | - |
| dc.date.issued | 2002 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060779 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/35437 | - |
| dc.description | Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002. | en |
| dc.format.extent | xi, 114 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.title | Metallorganic chemical vapor deposition(MOCVD) of tantalum oxynitride(TaOxNy) as a high k dielectric material for next generation devices | en |
| dc.title.alternative | 고유전물질로서 화학기상증착법으로 증착된 탄탈륨 질산화막에 대한 연구 | - |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | en |
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