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이온 주입을 통한 ALGaNGaN HEMT의 항복전압 향상 효과

DC Field Value Language
dc.contributor.advisor한민구-
dc.contributor.author조규헌-
dc.date.accessioned2010-01-26T15:37:50Z-
dc.date.available2010-01-26T15:37:50Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042248kog
dc.identifier.urihttps://hdl.handle.net/10371/45041-
dc.description학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8ko
dc.format.extentiv, 80 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectGaNko
dc.subjectGaNko
dc.subjectAlGaNko
dc.subjectAlGaNko
dc.subjectHEMTko
dc.subjectprotonko
dc.subject양성자ko
dc.subjectfluoride plasmako
dc.subjectfluoride 플라즈마ko
dc.subjectSiO2ko
dc.subjectSiO2ko
dc.subjectpassivationko
dc.subject패시베이션ko
dc.title이온 주입을 통한 ALGaNGaN HEMT의 항복전압 향상 효과ko
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeMasterko
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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