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Decomposition mechanism of Ti(O-iPr)2(dpm)2 on Si and Pt surface and the growth of an interlayer between TiO2 and Si : 실리콘과 백금 표면에서 Ti(O-iPr)2(dpm)2의 열분해 및 TiO2와 Si 사이의 계면 특성
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- Authors
- Advisor
- 문상흡
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- Ti(O-iPr)2(dpm)2 ; Ti(O-iPr)2(dpm)2 ; 타이타늄 다이옥사이드 ; titanium dioxide ; silicon ; 실리콘 ; platinum ; 백금 ; Ti-silicate ; 타이타늄 실리케이트 ; metal organic chemical vapor deposition (MOCVD) ; 금속 유기물 화학 기상 증착법 ; temperature programmed desorption (TPD) ; 원자층 증착법 ; in-situ X-ray photoelectron spectroscopy (XPS) ; 승온 탈착 분석법 ; 엑스선 양전자 분광법
- Description
- Thesis(doctor`s) --서울대학교 대학원 :응용화학부, 2005.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000052303
https://hdl.handle.net/10371/45345
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