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Characteristic Potential Method를 이용하여 비균일한 채널을 가진 n-MOSFET와 p-MOSFET 의 열잡음 과 1f 잡음의 계산

DC Field Value Language
dc.contributor.advisor민홍식-
dc.contributor.author문태웅-
dc.date.accessioned2010-01-27T14:48:27Z-
dc.date.available2010-01-27T14:48:27Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000053999kog
dc.identifier.urihttps://hdl.handle.net/10371/45632-
dc.description학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2004.ko
dc.format.extent56 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject열잡음ko
dc.subject1/f잡음ko
dc.subjectCharacteristic Potential Methodko
dc.subject잡음전력밀도ko
dc.titleCharacteristic Potential Method를 이용하여 비균일한 채널을 가진 n-MOSFET와 p-MOSFET 의 열잡음 과 1f 잡음의 계산ko
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeMasterko
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