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Passivation을 이용한 InGaAs-HEMT의 KINK 현상 개선에 관한 연구

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author최성순-
dc.date.accessioned2010-01-27T14:48:54Z-
dc.date.available2010-01-27T14:48:54Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000053800kog
dc.identifier.urihttps://hdl.handle.net/10371/45642-
dc.description학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2004.ko
dc.format.extent41 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectRPECVDko
dc.subjectSi ICLko
dc.subjectSiNko
dc.subjectPassivationko
dc.subjectsurface stateko
dc.subjectkink effectko
dc.subjectimpact ionizationko
dc.titlePassivation을 이용한 InGaAs-HEMT의 KINK 현상 개선에 관한 연구ko
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeMasterko
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