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Design and fabrication of 30nm self-aligned FinFET : 30nm 자기 정렬형 FinFET 설계 및 제작

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author우동수-
dc.date.accessioned2010-01-27T23:12:52Z-
dc.date.available2010-01-27T23:12:52Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055116eng
dc.identifier.urihttps://hdl.handle.net/10371/45823-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2004.en
dc.format.extentiv, 116 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjectself-aligned FinFETen
dc.subject이중 게이트 MOSFETen
dc.subjectwide source/drainen
dc.subject넓은 소소/드레인en
dc.subjectnon-uniform dopingen
dc.subject불균일 도핑en
dc.subjectshort channel effecten
dc.subject단채널효과en
dc.titleDesign and fabrication of 30nm self-aligned FinFETen
dc.title.alternative30nm 자기 정렬형 FinFET 설계 및 제작en
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeDoctoren
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