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A study on the residual ion doping damage at sourcedrain junctions of excimer-laser-annealed polycrystalline silicon thin film transistors : 多結晶 실리콘 薄膜 트랜지스터의 소오스드레인 接合에 殘存하는 이온 注入 損傷에 關한 硏究
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- Authors
- Advisor
- 한민구
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- 엑시머 레이저 어닐링 ; Polycrystalline silicon (poly-si) ; 다결정 실리콘 ; Thin film transistor (tft) ; 박막 트랜지스터 ; Excimer laser annealing (ela) ; 사선 입사 ; Oblique-incidence ; 이온 주입 손상 ; Ion doping ; 회절 ; Damage ; 누설 전류 ; Diffraction ; 신뢰도 ; Leakage current ; Stability
- Description
- Thesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2003.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058652
https://hdl.handle.net/10371/45885
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