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Formation of nanometer-thick fluorinated oxide films and their applications : 나노미터 두께 불소화 산화물 박막의 형성과 그 응용에 대한 연구

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dc.contributor.advisor차국린-
dc.contributor.author김대식-
dc.date.accessioned2010-01-28T09:18:46Z-
dc.date.available2010-01-28T09:18:46Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000049928eng
dc.identifier.urihttps://hdl.handle.net/10371/46453-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :물리학부,2005.en
dc.format.extentxiii, 118 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjecttunneling magnetoresistance (TMR)en
dc.subject꿰뚫기 자기 저항en
dc.subjectmagnetic tunnel junctions (MTJ)en
dc.subject자기 꿰뚫기 접합en
dc.subjecttunnelingen
dc.subject꿰뚫기en
dc.subjecttunnel barrieren
dc.subject꿰뚫기 장벽en
dc.subjectplasma oxidationen
dc.subject플라즈마 산화en
dc.subjectfluorine dopingen
dc.subject불소 도핑en
dc.subjectfluorinationen
dc.subject불소화en
dc.subjectfluorinated oxideen
dc.subject불소화 산화물en
dc.subjectoxyfluorideen
dc.subject산불화물en
dc.subjectmetal-oxide-semiconductor (MOS)en
dc.subject금속-산화막-반도체en
dc.subjectgate oxideen
dc.subject게이트 산화막en
dc.subjecteffective oxide thickness (EOT)en
dc.subject유효 산화막 두께en
dc.subjectgate leakage currenten
dc.subject게이트 누설 전류en
dc.subjectoxygen vacancyen
dc.subject산소 결핍en
dc.subjectdefectsen
dc.subject결함en
dc.subjectdielectric breakdownen
dc.subject유전성 깨짐en
dc.subjectleakage channelen
dc.subject누설 전류 통로en
dc.titleFormation of nanometer-thick fluorinated oxide films and their applicationsen
dc.title.alternative나노미터 두께 불소화 산화물 박막의 형성과 그 응용에 대한 연구en
dc.typeThesis-
dc.contributor.department물리학부-
dc.description.degreeDoctoren
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