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50nm InP-based HEMT 공정 개발 및 제작에 관한 연구

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author오선영-
dc.date.accessioned2010-02-02T07:06:59Z-
dc.date.available2010-02-02T07:06:59Z-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000057453kog
dc.identifier.urihttps://hdl.handle.net/10371/48309-
dc.description학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2003.ko
dc.format.extent44, 5 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subjectT-Gateko
dc.subjectLV1ko
dc.subjectE-Beam lithographyko
dc.subject건식 식각ko
dc.subjectInP HEMTko
dc.title50nm InP-based HEMT 공정 개발 및 제작에 관한 연구ko
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeMasterko
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