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Characterization and fabrication of nanocrystalline silicon thin film transistors fabricated at 200℃
200 度에서 制作된 微細結晶 실리콘 薄膜 트랜지스터 制作 및 特性에 관한 硏究

DC Field Value Language
dc.contributor.advisor한민구-
dc.contributor.author박중현-
dc.date.accessioned2010-02-02T08:23:06Z-
dc.date.available2010-02-02T08:23:06Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039600eng
dc.identifier.urihttps://hdl.handle.net/10371/48438-
dc.descriptionThesis(doctors)--서울대학교 대학원 :전기. 컴퓨터공학부,2008.2.en
dc.format.extentx, 105 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject미세 결정 실리콘en
dc.subjectnanocrystalline silicon (nc-Si)en
dc.subject박막 트랜지스터en
dc.subjectthin film transistor (TFT)en
dc.subject유도 결합 플라즈마 화학 기상 증착en
dc.subjectinductively coupled plasma chemical vapor deposition (ICP-CVD)en
dc.subject부화층en
dc.subjectincubation layeren
dc.subject누설 전류en
dc.subjectleakage currenten
dc.subject전계 효과 이동도en
dc.subjectfield effect mobilityen
dc.titleCharacterization and fabrication of nanocrystalline silicon thin film transistors fabricated at 200℃en
dc.title.alternative200 度에서 制作된 微細結晶 실리콘 薄膜 트랜지스터 制作 및 特性에 관한 硏究en
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeDoctoren
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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