Browse

Impact-ionization metal-oxide-semiconductor (I-MOS) devices using avalanche breakdown mechanism
沙汰 降伏 원리를 이용한 이온화 충돌 반도체 소자

Cited 0 time in Web of Science Cited 0 time in Scopus
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse