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Impact-ionization metal-oxide-semiconductor (I-MOS) devices using avalanche breakdown mechanism : 沙汰 降伏 원리를 이용한 이온화 충돌 반도체 소자

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author최우영-
dc.date.accessioned2010-02-02T16:07:52Z-
dc.date.available2010-02-02T16:07:52Z-
dc.date.copyright2006-
dc.date.issued2006-
dc.identifier.other000000046613-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000046613-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :전기공학부,2006.-
dc.format.extentv, 169 p.-
dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subject상보형 금속 산화물 반도체 (CMOS) 소자-
dc.subjectcomplementary metal-oxide-semiconductor (CMOS) device-
dc.subject새로운 소자-
dc.subjectnovel device-
dc.subject금속 산화물반도체 전계효과 트랜지스터 (MOSFET)-
dc.subjectMOS field-effect transistor (MOSFET)-
dc.subject사태 항복 원리를 이용한 이온화 충돌 반도체 (I-MOS) 소자-
dc.subjectimpact-ionization MOS (I-MOS) device-
dc.subject문턱전압 이하 기울기-
dc.subjectsubthreshold swing-
dc.subject이온화 충돌-
dc.subjectimpact ionization-
dc.subject사태 항복-
dc.subjectavalanche breakdown-
dc.subject새로운 바이어싱 방법-
dc.subjectnovel biasing scheme-
dc.subject새로운 소자 제작 방법-
dc.subjectnovel fabrication method-
dc.subject자기 정렬-
dc.subjectself-alignment-
dc.subject터널링 전계효과 트랜지스터 (TFET)-
dc.subjecttunneling FET (TFET)-
dc.subject집적-
dc.subjectintegration-
dc.subject반전기-
dc.subjectinverter-
dc.subjectNAND 게이트-
dc.subjectNAND gate-
dc.subjectNOR 게이트-
dc.subjectNOR gate-
dc.subject6T-SRAM 셀-
dc.subjectand 6T-SRAM cell-
dc.titleImpact-ionization metal-oxide-semiconductor (I-MOS) devices using avalanche breakdown mechanism-
dc.title.alternative沙汰 降伏 원리를 이용한 이온화 충돌 반도체 소자-
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeThesis(doctoral)---
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