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Deep blue phosphorescent organic light-emitting diodes using a Si based wide bandgap host and an Ir dopant with electron withdrawing substituents

DC Field Value Language
dc.contributor.authorKim, Sung Hyun-
dc.contributor.authorJang, Jyongsik-
dc.contributor.authorLee, Seok Jong-
dc.contributor.authorLee, Jun Yeob-
dc.date.accessioned2010-02-02T23:43:39Z-
dc.date.available2010-02-02T23:43:39Z-
dc.date.issued2008-08-27-
dc.identifier.citationThin Solid Films 517 (2008) 722–726en
dc.identifier.issn0040-6090-
dc.identifier.urihttps://hdl.handle.net/10371/48978-
dc.description.abstractA deep blue phosphorescent organic light-emitting diode was developed using a diphenyldi(4-(9-carbazoly)
lphenyl)silane(SiCa) host material and a tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium(FCNIr) dopant
material. Triplet bandgap of the SiCa was 3.0 eV, while triplet bandgap of the FCNIr was 2.8 eV. Light-emitting
performances of blue devices were investigated by changing doping concentration of the FCNIr and a pure
blue emission with a color coordinate of (0.15, 0.19) could be obtained.
en
dc.description.sponsorshipThis work was supported by grant No. RTI04-01-02 fromthe Regional
Technology Innovation Program of the Ministry of Knowledge Economy
(MKE).
en
dc.language.isoenen
dc.publisherElsevieren
dc.subjectBlue phosphorescent deviceen
dc.subjectWide triplet bandgapen
dc.subjectDeep blueen
dc.titleDeep blue phosphorescent organic light-emitting diodes using a Si based wide bandgap host and an Ir dopant with electron withdrawing substituentsen
dc.typeArticleen
dc.contributor.AlternativeAuthor김성현-
dc.contributor.AlternativeAuthor장정식-
dc.contributor.AlternativeAuthor이석종-
dc.contributor.AlternativeAuthor이준엽-
dc.identifier.doi10.1016/j.tsf.2008.08.156-
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